Microchip APT10050LVRG

生命周期状态

Production (Last Updated: 1 month ago)

底架

通孔

安装类型

通孔

包装/外壳

TO-264-3, TO-264AA

供应商器件包装

TO-264 [L]

Manufacturer Part Number

MJE225

Manufacturer

Miscellaneous

Continuous Drain Current Id

21

Number of Elements

1

Voltage Rating (DC)

1 kV

RoHS

Compliant

Turn Off Delay Time

59 ns

Package

Tube

Base Product Number

APT10050

Current - Continuous Drain (Id) @ 25℃

21A (Tc)

厂商

微芯片技术

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

1 kV

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

520 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.352740 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

通孔

Channel Mode

Enhancement

Brand

Microchip Technology / Atmel

Qg - Gate Charge

500 nC

Rds On - Drain-Source Resistance

500 mOhms

Id - Continuous Drain Current

21 A

系列

POWER MOS V®

包装

Tube

最高工作温度

150 °C

最小工作温度

-55 °C

子类别

MOSFETs

最大功率耗散

625 W

技术

MOSFET (Metal Oxide)

额定电流

21 A

配置

Single

通道数量

1 Channel

功率耗散

520

接通延迟时间

16 ns

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

500mOhm @ 500mA, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 2.5mA

输入电容(Ciss)(Max)@Vds

7900 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

500 nC @ 10 V

上升时间

13 ns

漏源电压 (Vdss)

500 V

产品类别

MOSFET

连续放电电流(ID)

21 A

栅极至源极电压(Vgs)

30 V

输入电容

8.797 nF

信道型

N

场效应管特性

-

最大rds

80 mΩ

产品类别

MOSFET

辐射硬化

无

无铅

无铅