Microchip APT10M25BVRG

包装/外壳

TO-247-3

安装类型

通孔

引脚数

24

供应商器件包装

TO-247 [B]

RoHS

Compliant

Product Status

活跃

厂商

微芯片技术

Current - Continuous Drain (Id) @ 25℃

75A (Tc)

Base Product Number

APT10M25

Package

Tube

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

300 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.211644 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

Microchip

Brand

Microchip Technology / Atmel

Qg - Gate Charge

225 nC

Rds On - Drain-Source Resistance

25 mOhms

Id - Continuous Drain Current

75 A

系列

POWER MOS V®

包装

Tube

子类别

MOSFETs

技术

MOSFET (Metal Oxide)

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

25mOhm @ 500mA, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 1mA

输入电容(Ciss)(Max)@Vds

5160 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

225 nC @ 10 V

漏源电压 (Vdss)

100 V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET