Microchip APT18M100B

安装类型

通孔

包装/外壳

TO-247-3

供应商器件包装

TO-247 [B]

Package

Tube

Base Product Number

APT18M100

Current - Continuous Drain (Id) @ 25℃

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

微芯片技术

Power Dissipation (Max)

625W (Tc)

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

1 kV

Typical Turn-On Delay Time

22 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

625 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.211644 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

通孔

Forward Transconductance - Min

19 S

Channel Mode

Enhancement

Manufacturer

Microchip

Brand

Microchip Technology / Atmel

Qg - Gate Charge

150 nC

Tradename

Power MOS 8

Rds On - Drain-Source Resistance

600 mOhms

RoHS

Details

Typical Turn-Off Delay Time

75 ns

Id - Continuous Drain Current

18 A

操作温度

-55°C ~ 150°C (TJ)

系列

-

包装

Tube

子类别

MOSFETs

技术

MOSFET (Metal Oxide)

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

700mOhm @ 9A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 1mA

输入电容(Ciss)(Max)@Vds

4845 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

150 nC @ 10 V

上升时间

20 ns

漏源电压 (Vdss)

1000 V

Vgs（最大值）

±30V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET

宽度

16.26 mm

高度

5.31 mm

长度

21.46 mm