Microchip APT20M38BVRG

包装/外壳

TO-247-3

安装类型

通孔

供应商器件包装

TO-247 [B]

Continuous Drain Current Id

67

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 1mA

Product Status

活跃

Power Dissipation (Max)

370W (Tc)

厂商

微芯片技术

Drive Voltage (Max Rds On, Min Rds On)

10V

Current - Continuous Drain (Id) @ 25℃

67A (Tc)

Base Product Number

APT20M38

Package

Tube

Vds - Drain-Source Breakdown Voltage

200 V

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

370 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Channel Mode

Enhancement

Qg - Gate Charge

225 nC

Rds On - Drain-Source Resistance

38 mOhms

Id - Continuous Drain Current

67 A

系列

POWER MOS V®

操作温度

-55°C ~ 150°C (TJ)

技术

MOSFET (Metal Oxide)

通道数量

1 Channel

功率耗散

370

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

38mOhm @ 500mA, 10V

输入电容(Ciss)(Max)@Vds

6120 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

225 nC @ 10 V

漏源电压 (Vdss)

200 V

Vgs（最大值）

±30V

信道型

N

场效应管特性

-