Microchip APT28M120B2

安装类型

通孔

包装/外壳

TO-247-3 Variant

供应商器件包装

T-MAX™ [B2]

Continuous Drain Current Id

29

Package

Tube

Base Product Number

APT28M120

Current - Continuous Drain (Id) @ 25℃

29A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

微芯片技术

Power Dissipation (Max)

1135W (Tc)

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

1.2 kV

Typical Turn-On Delay Time

50 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

1.135 kW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.208116 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

通孔

Forward Transconductance - Min

31 S

Channel Mode

Enhancement

Manufacturer

Microchip

Brand

Microchip Technology / Atmel

Qg - Gate Charge

300 nC

Rds On - Drain-Source Resistance

530 mOhms

RoHS

Details

Typical Turn-Off Delay Time

170 ns

Id - Continuous Drain Current

29 A

操作温度

-55°C ~ 150°C (TJ)

系列

POWER MOS 8™

包装

Tube

子类别

MOSFETs

技术

MOSFET (Metal Oxide)

配置

Single

通道数量

1 Channel

功率耗散

1.135

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

560mOhm @ 14A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 2.5mA

输入电容(Ciss)(Max)@Vds

9670 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

300 nC @ 10 V

上升时间

31 ns

漏源电压 (Vdss)

1200 V

Vgs（最大值）

±30V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET

宽度

5.31 mm

高度

21.46 mm

长度

16.26 mm