Microchip APT30M19JVR

安装类型

底座安装

包装/外壳

SOT-227-4, miniBLOC

供应商器件包装

ISOTOP®

Manufacturer Part Number

XTCE080F22WD

Manufacturer

Cutler Hammer, Div of Eaton Co

Package

Tube

Base Product Number

APT30M19

Current - Continuous Drain (Id) @ 25℃

130A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

微芯片技术

Power Dissipation (Max)

700W (Tc)

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

300 V

Typical Turn-On Delay Time

22 ns

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

700 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

1.058219 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

底座安装

Brand

微芯片技术

Rds On - Drain-Source Resistance

19 mOhms

RoHS

Details

Typical Turn-Off Delay Time

70 ns

Id - Continuous Drain Current

130 A

操作温度

-55°C ~ 150°C (TJ)

系列

POWER MOS V®

包装

Tube

子类别

Discrete Semiconductor Modules

技术

MOSFET (Metal Oxide)

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

19mOhm @ 500mA, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 5mA

输入电容(Ciss)(Max)@Vds

21600 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

975 nC @ 10 V

上升时间

33 ns

漏源电压 (Vdss)

300 V

Vgs（最大值）

±30V

产品类别

Discrete Semiconductor Modules

场效应管特性

-

产品

功率MOSFET模块

产品类别

Discrete Semiconductor Modules