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价格梯度
内地含税价
1
¥193.983314
10
¥183.003126
100
¥172.644462
500
¥162.872134
1000
¥153.652953
APT30M60J详情
Microchip APT30M60J重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
底座安装
包装/外壳
SOT-227-4, miniBLOC
供应商器件包装
ISOTOP®
Manufacturer Part Number
1608976
Range
5 mm
Manufacturer
Turck
RoHS
有
Package
Tube
Base Product Number
APT30M60
Current - Continuous Drain (Id) @ 25℃
31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
厂商
微芯片技术
Power Dissipation (Max)
355W (Tc)
Product Status
活跃
Vds - Drain-Source Breakdown Voltage
600 V
Typical Turn-On Delay Time
48 ns
Vgs th - Gate-Source Threshold Voltage
3 V
Pd - Power Dissipation
355 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 30 V, + 30 V
Unit Weight
1.058219 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
1
Mounting Styles
底座安装
Brand
微芯片技术
Rds On - Drain-Source Resistance
120 mOhms
Typical Turn-Off Delay Time
145 ns
Id - Continuous Drain Current
31 A
操作温度
-55°C ~ 150°C (TJ)
系列
POWER MOS 8™
包装
Tube
子类别
Discrete Semiconductor Modules
技术
MOSFET (Metal Oxide)
屏蔽/屏蔽
Shielded
输出类型
NO PNP
配置
Single
通道数量
1 Channel
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
150mOhm @ 21A, 10V
不同 Id 时 Vgs(th)(最大值)
5V @ 2.5mA
输入电容(Ciss)(Max)@Vds
5890 pF @ 25 V
门极电荷(Qg)(最大)@Vgs
215 nC @ 10 V
上升时间
55 ns
漏源电压 (Vdss)
600 V
Vgs(最大值)
±30V
产品类别
Discrete Semiconductor Modules
场效应管特性
-
产品
功率MOSFET模块
连接类型
Cable with M12 Connector
产品类别
Discrete Semiconductor Modules
电源类型
DC
APT30M60J拓展信息
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