Microchip APT32F120J

安装类型

底座安装

包装/外壳

SOT-227-4, miniBLOC

供应商器件包装

ISOTOP®

RoHS

Non-Compliant

Continuous Drain Current Id

33

Package

Tube

Base Product Number

APT32F120

Current - Continuous Drain (Id) @ 25℃

33A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

微芯片技术

Power Dissipation (Max)

960W (Tc)

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

1.2 kV

Typical Turn-On Delay Time

100 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

960 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

30 V

Unit Weight

1.058219 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

螺钉安装

Manufacturer

Microchip

Brand

微芯片技术

Tradename

POWER MOS 8, ISOTOP

Rds On - Drain-Source Resistance

270 mOhms

Typical Turn-Off Delay Time

315 ns

Id - Continuous Drain Current

33 A

操作温度

-55°C ~ 150°C (TJ)

系列

POWER MOS 8™

包装

Tube

子类别

Discrete Semiconductor Modules

技术

MOSFET (Metal Oxide)

配置

Single

通道数量

1 Channel

功率耗散

960

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

320mOhm @ 25A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 2.5mA

输入电容(Ciss)(Max)@Vds

18200 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

560 nC @ 10 V

上升时间

60 ns

漏源电压 (Vdss)

1200 V

Vgs（最大值）

±30V

产品类别

Discrete Semiconductor Modules

信道型

N

场效应管特性

-

产品

功率MOSFET模块

产品类别

Discrete Semiconductor Modules

宽度

25.4 mm

高度

9.6 mm

长度

38.2 mm