注:图像仅供参考,请参阅产品规格
技术文档

价格梯度
内地含税价
1
¥214.021655
10
¥201.907223
100
¥190.478515
500
¥179.696705
1000
¥169.525195
APT5010JVRU3详情
Microchip APT5010JVRU3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
底座安装
包装/外壳
SOT-227-4, miniBLOC
供应商器件包装
SOT-227
Continuous Drain Current Id
44
Package
Bulk
Base Product Number
APT5010
Current - Continuous Drain (Id) @ 25℃
44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
厂商
微芯片技术
Power Dissipation (Max)
450W (Tc)
Product Status
活跃
Vds - Drain-Source Breakdown Voltage
500 V
Typical Turn-On Delay Time
18 ns
Vgs th - Gate-Source Threshold Voltage
2 V
Pd - Power Dissipation
450 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 30 V, + 30 V
Unit Weight
1.058219 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
1
Mounting Styles
螺钉安装
Manufacturer
Microchip
Brand
Microchip Technology / Atmel
Tradename
ISOTOP
Rds On - Drain-Source Resistance
100 mOhms
RoHS
Details
Typical Turn-Off Delay Time
54 ns
Id - Continuous Drain Current
44 A
操作温度
-55°C ~ 150°C (TJ)
系列
-
包装
Tube
类型
MOSFET
子类别
Discrete Semiconductor Modules
技术
MOSFET (Metal Oxide)
配置
Single
通道数量
1 Channel
功率耗散
450
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
100mOhm @ 22A, 10V
不同 Id 时 Vgs(th)(最大值)
4V @ 2.5mA
输入电容(Ciss)(Max)@Vds
7410 pF @ 25 V
门极电荷(Qg)(最大)@Vgs
312 nC @ 10 V
上升时间
16 ns
漏源电压 (Vdss)
500 V
Vgs(最大值)
±30V
产品类别
Discrete Semiconductor Modules
信道型
N
场效应管特性
-
产品
功率MOSFET模块
产品类别
Discrete Semiconductor Modules
宽度
25.4 mm
高度
9.6 mm
长度
38.2 mm
APT5010JVRU3拓展信息
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology







哦! 它是空的。