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价格梯度
内地含税价
1
¥506.116119
10
¥477.468033
100
¥450.441542
500
¥424.944853
1000
¥400.891369
APT50M50JVFR详情
Microchip APT50M50JVFR重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
底座安装
包装/外壳
SOT-227-4, miniBLOC
供应商器件包装
ISOTOP®
Continuous Drain Current Id
77
Package
Tube
Base Product Number
APT50M50
Current - Continuous Drain (Id) @ 25℃
77A (Tc)
厂商
微芯片技术
Product Status
活跃
Vds - Drain-Source Breakdown Voltage
500 V
Typical Turn-On Delay Time
25 ns
Vgs th - Gate-Source Threshold Voltage
2 V
Pd - Power Dissipation
700 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 30 V, + 30 V
Unit Weight
1.058219 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
1
Mounting Styles
螺钉安装
Manufacturer
Microchip
Brand
微芯片技术
Rds On - Drain-Source Resistance
50 mOhms
RoHS
Details
Typical Turn-Off Delay Time
85 ns
Id - Continuous Drain Current
77 A
系列
POWER MOS V®
包装
Tube
类型
MOSFET
子类别
Discrete Semiconductor Modules
技术
MOSFET (Metal Oxide)
工作电源电压
0.5 V
配置
Single
功率耗散
700
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
50mOhm @ 500mA, 10V
不同 Id 时 Vgs(th)(最大值)
4V @ 5mA
输入电容(Ciss)(Max)@Vds
19600 pF @ 25 V
门极电荷(Qg)(最大)@Vgs
1000 nC @ 10 V
上升时间
20 ns
漏源电压 (Vdss)
500 V
产品类别
Discrete Semiconductor Modules
信道型
N
场效应管特性
-
产品
功率MOSFET模块
产品类别
Discrete Semiconductor Modules
APT50M50JVFR拓展信息
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