Microchip APT50M75JLLU2

安装类型

底座安装

包装/外壳

SOT-227-4, miniBLOC

供应商器件包装

SOT-227

Continuous Drain Current Id

51

Package

Bulk

Base Product Number

APT50M75

Current - Continuous Drain (Id) @ 25℃

51A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

微芯片技术

Power Dissipation (Max)

290W (Tc)

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

500 V

Typical Turn-On Delay Time

10 ns

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

290 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

1.058219 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

螺钉安装

Manufacturer

Microchip

Brand

微芯片技术

Tradename

POWER MOS 7, ISOTOP

Rds On - Drain-Source Resistance

75 mOhms

RoHS

Details

Typical Turn-Off Delay Time

21 ns

Id - Continuous Drain Current

51 A

操作温度

-55°C ~ 150°C (TJ)

系列

POWER MOS 7®

包装

Tube

类型

MOSFET

子类别

Discrete Semiconductor Modules

技术

MOSFET (Metal Oxide)

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

75mOhm @ 25.5A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 1mA

输入电容(Ciss)(Max)@Vds

5590 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

123 nC @ 10 V

上升时间

20 ns

漏源电压 (Vdss)

500 V

Vgs（最大值）

±30V

产品类别

Discrete Semiconductor Modules

信道型

N

场效应管特性

-

产品

功率MOSFET模块

产品类别

Discrete Semiconductor Modules

宽度

25.4 mm

高度

9.6 mm

长度

38.2 mm