Microchip APT7M120B

安装类型

通孔

包装/外壳

TO-247-3

供应商器件包装

TO-247 [B]

Continuous Drain Current Id

8

Package

Tube

Base Product Number

APT7M120

Current - Continuous Drain (Id) @ 25℃

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

微芯片技术

Power Dissipation (Max)

335W (Tc)

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

1.2 kV

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

335 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Channel Mode

Enhancement

Qg - Gate Charge

80 nC

Rds On - Drain-Source Resistance

1.5 Ohms

Id - Continuous Drain Current

8 A

操作温度

-55°C ~ 150°C (TJ)

系列

-

技术

MOSFET (Metal Oxide)

通道数量

1 Channel

功率耗散

335

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

2.5Ohm @ 3A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 1mA

输入电容(Ciss)(Max)@Vds

2565 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

80 nC @ 10 V

漏源电压 (Vdss)

1200 V

Vgs（最大值）

±30V

信道型

N

场效应管特性

-