Microchip APT8075BVRG

包装/外壳

TO-247-3

Qualification

MIL-PRF-55681/8

Vds - Drain-Source Breakdown Voltage

800 V

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

260 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.211644 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

Microchip

Brand

Microchip Technology / Atmel

Qg - Gate Charge

195 nC

Rds On - Drain-Source Resistance

750 mOhms

RoHS

Details

Id - Continuous Drain Current

12 A

包装

Tube

电容量

33 pF

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

产品类别

MOSFET

产品类别

MOSFET

产品长度

3.2 mm

产品宽度

3.2 x 1.6 x 1.3