Microchip APTM50DAM19G

包装/外壳

SP6

安装类型

底座安装

供应商器件包装

SP6

Continuous Drain Current Id

163

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

5V @ 10mA

Product Status

活跃

Power Dissipation (Max)

1136W (Tc)

厂商

微芯片技术

Drive Voltage (Max Rds On, Min Rds On)

10V

Current - Continuous Drain (Id) @ 25℃

163A (Tc)

Base Product Number

APTM50

Package

Bulk

Factory Pack QuantityFactory Pack Quantity

1

Manufacturer

Microchip

Brand

微芯片技术

RoHS

Details

系列

-

操作温度

-40°C ~ 150°C (TJ)

包装

Tube

子类别

Discrete Semiconductor Modules

技术

MOSFET (Metal Oxide)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

22.5mOhm @ 81.5A, 10V

输入电容(Ciss)(Max)@Vds

22400 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

492 nC @ 10 V

漏源电压 (Vdss)

500 V

Vgs（最大值）

±30V

产品类别

Discrete Semiconductor Modules

信道型

N

场效应管特性

-

产品类别

Discrete Semiconductor Modules