注:图像仅供参考,请参阅产品规格
技术文档

价格梯度
内地含税价
1
¥113.5133
10
¥107.08802
100
¥101.02643
500
¥95.307958
1000
¥89.913167
MSC015SMA070B详情
Microchip MSC015SMA070B重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-247-3
供应商器件包装
TO-247-3
Continuous Drain Current Id
140
Package
Tube
Base Product Number
MSC015
Current - Continuous Drain (Id) @ 25℃
131A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
厂商
微芯片技术
Power Dissipation (Max)
400W (Tc)
Product Status
活跃
Vds - Drain-Source Breakdown Voltage
700 V
Vgs th - Gate-Source Threshold Voltage
1.9 V
Pd - Power Dissipation
400 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 175 C
Vgs - Gate-Source Voltage
- 10 V, + 25 V
Unit Weight
0.211644 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
1
Mounting Styles
通孔
Channel Mode
Enhancement
Manufacturer
Microchip
Brand
Microchip Technology / Atmel
Qg - Gate Charge
215 nC
Rds On - Drain-Source Resistance
19 mOhms
RoHS
Details
Id - Continuous Drain Current
140 A
操作温度
-55°C ~ 175°C (TJ)
系列
-
包装
Tube
子类别
MOSFETs
技术
SiCFET (Silicon Carbide)
配置
Single
通道数量
1 Channel
功率耗散
455
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
19mOhm @ 40A, 20V
不同 Id 时 Vgs(th)(最大值)
2.4V @ 1mA
输入电容(Ciss)(Max)@Vds
4500 pF @ 700 V
门极电荷(Qg)(最大)@Vgs
215 nC @ 20 V
漏源电压 (Vdss)
700 V
Vgs(最大值)
+25V, -10V
产品类别
MOSFET
场效应管特性
-
产品类别
MOSFET
MSC015SMA070B拓展信息
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology







哦! 它是空的。