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价格梯度
内地含税价
1
¥290.501326
10
¥274.057858
100
¥258.545147
500
¥243.910515
1000
¥230.104259
MSC040SMA120J详情
Microchip MSC040SMA120J重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
底座安装
包装/外壳
SOT-227-4, miniBLOC
供应商器件包装
SOT-227 (ISOTOP®)
Lead Free Status / RoHS Status
--
Cable Types
Flexstrip
Continuous Drain Current Id
53
Package
Tube
Base Product Number
MSC040
Current - Continuous Drain (Id) @ 25℃
53A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
厂商
微芯片技术
Power Dissipation (Max)
208W (Tc)
Product Status
活跃
Vds - Drain-Source Breakdown Voltage
1.2 kV
Pd - Power Dissipation
208 W
Transistor Polarity
N-Channel
Id - Continuous Drain Current
53 A
RoHS
Details
Rds On - Drain-Source Resistance
50 mOhms
Brand
微芯片技术
Manufacturer
Microchip
Mounting Styles
螺钉安装
Factory Pack QuantityFactory Pack Quantity
1
Minimum Operating Temperature
- 55 C
Unit Weight
1.780872 oz
Vgs - Gate-Source Voltage
- 10 V, + 25 V
Maximum Operating Temperature
+ 175 C
系列
--
操作温度
-55°C ~ 175°C (TJ)
包装
Tube
零件状态
活跃
湿度敏感性等级(MSL)
--
类型
功率MOSFET
子类别
Discrete Semiconductor Modules
螺距
0.100 (2.54mm)
技术
SiCFET (Silicon Carbide)
导体数量
15
终端样式
两侧电线完全裸露
配置
Single
通道数量
1 Channel
功率耗散
208
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
50mOhm @ 40A, 20V
不同 Id 时 Vgs(th)(最大值)
2.8V @ 1mA
输入电容(Ciss)(Max)@Vds
1990 pF @ 1000 V
门极电荷(Qg)(最大)@Vgs
137 nC @ 20 V
漏源电压 (Vdss)
1200 V
Vgs(最大值)
+25V, -10V
产品类别
Discrete Semiconductor Modules
场效应管特性
-
产品
IGBT碳化硅模块
产品类别
Discrete Semiconductor Modules
长度
1.000 (25.40mm)
长度 - 暴露的端部
0.150 (3.81mm)
MSC040SMA120J拓展信息
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
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