Microchip MSC080SMA120B

生命周期状态

Production (Last Updated: 9 months ago)

安装类型

通孔

包装/外壳

TO-247-3

供应商器件包装

TO-247-3

Continuous Drain Current Id

37

Package

Tube

Base Product Number

MSC080

Current - Continuous Drain (Id) @ 25℃

37A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

20V

厂商

微芯片技术

Power Dissipation (Max)

200W (Tc)

Product Status

活跃

Package Type

TO-247

Vds - Drain-Source Breakdown Voltage

1.2 kV

Vgs th - Gate-Source Threshold Voltage

1.8 V

Pd - Power Dissipation

200 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 10 V, + 23 V

Unit Weight

0.211644 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

Microchip

Brand

Microchip Technology / Atmel

Qg - Gate Charge

64 nC

Rds On - Drain-Source Resistance

100 mOhms

RoHS

Details

Id - Continuous Drain Current

37 A

Schedule B

8541290080/8541290080/8541290080/8541290080/8541290080

操作温度

-55°C ~ 175°C (TJ)

系列

-

包装

Tube

子类别

MOSFETs

技术

SiCFET (Silicon Carbide)

配置

Single

通道数量

1 Channel

功率耗散

200

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

100mOhm @ 15A, 20V

不同 Id 时 Vgs(th)（最大值）

2.8V @ 1mA

输入电容(Ciss)(Max)@Vds

838 pF @ 1000 V

门极电荷(Qg)(最大)@Vgs

64 nC @ 20 V

漏源电压 (Vdss)

1200 V

Vgs（最大值）

+23V, -10V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET