Microchip MSC080SMA120SA

包装/外壳

QFN

安装类型

表面贴装

供应商器件包装

TO-268

Product Depth (mm)

5(mm)

Operating Temp Range

-40C to 85C

Mounting Styles

表面贴装

Vds - Drain-Source Breakdown Voltage

1.2 kV

Typical Turn-On Delay Time

4 ns, 5 ns

Vgs th - Gate-Source Threshold Voltage

2.8 V

Pd - Power Dissipation

182 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 10 V, + 23 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1

Channel Mode

Enhancement

Manufacturer

Microchip

Brand

Microchip Technology / Atmel

Qg - Gate Charge

64 nC

Rds On - Drain-Source Resistance

80 mOhms

Typical Turn-Off Delay Time

21 ns, 24 ns

Id - Continuous Drain Current

35 A

Package

Tube

Base Product Number

MSC080

Current - Continuous Drain (Id) @ 25℃

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

20V

厂商

微芯片技术

Power Dissipation (Max)

182W (Tc)

Product Status

活跃

Usage Level

Industrial grade

包装

Bulk

操作温度

-55°C ~ 175°C (TJ)

系列

-

子类别

MOSFETs

技术

Si

引脚数量

4

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

100mOhm @ 15A, 20V

不同 Id 时 Vgs(th)（最大值）

2.8V @ 1mA

输入电容(Ciss)(Max)@Vds

838 pF @ 1000 V

门极电荷(Qg)(最大)@Vgs

64 nC @ 20 V

上升时间

4 ns

漏源电压 (Vdss)

1200 V

Vgs（最大值）

+23V, -10V

产品类别

MOSFET

筛选水平

Industrial

场效应管特性

-

产品类别

MOSFET

产品长度(mm)

7(mm)

产品高度(mm)

0.9(mm)