Microchip Technology APT10026L2FLLG

包装/外壳

TO-264-3

安装类型

通孔

表面安装

NO

供应商器件包装

264 MAX™ [L2]

终端数量

3

晶体管元件材料

SILICON

Typical Turn-Off Delay Time

39 ns

Typical Turn-On Delay Time

17 ns

Unit Weight

0.352740 oz

Factory Pack QuantityFactory Pack Quantity

1

Fall Time

9 ns

Channel Mode

Enhancement

Pd - Power Dissipation

893 W

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 55 C

Qg - Gate Charge

267 nC

Vgs th - Gate-Source Threshold Voltage

3 V

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Rds On - Drain-Source Resistance

260 mOhms

Id - Continuous Drain Current

38 A

Vds - Drain-Source Breakdown Voltage

1 kV

Transistor Polarity

N-Channel

Mounting Styles

通孔

RoHS

Details

Continuous Drain Current Id

38

Package

Tube

Base Product Number

APT10026

Current - Continuous Drain (Id) @ 25℃

38A (Tc)

厂商

微芯片技术

Product Status

活跃

Package Description

FLANGE MOUNT, R-PSFM-T3

Package Style

FLANGE MOUNT

Package Body Material

PLASTIC/EPOXY

Operating Temperature-Min

-55 °C

Operating Temperature-Max

150 °C

Manufacturer Part Number

APT10026L2FLLG

Package Shape

RECTANGULAR

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

MICROCHIP TECHNOLOGY INC

Risk Rank

5.28

Drain Current-Max (ID)

38 A

包装

Tube

系列

POWER MOS 7®

端子位置

SINGLE

终端形式

THROUGH-HOLE

Reach合规守则

unknown

JESD-30代码

R-PSFM-T3

配置

Single

通道数量

1 Channel

操作模式

增强型MOSFET

功率耗散

893

箱体转运

DRAIN

场效应管类型

N-Channel

晶体管应用

SWITCHING

Rds On(Max)@Id,Vgs

260mOhm @ 19A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 5mA

输入电容(Ciss)(Max)@Vds

7114 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

267 nC @ 10 V

上升时间

8 ns

漏源电压 (Vdss)

1000 V

极性/通道类型

N-CHANNEL

晶体管类型

1 N-Channel

JEDEC-95代码

TO-264AA

最大漏极电流 (Abs) (ID)

38 A

漏极-源极导通最大电阻

0.26 Ω

脉冲漏极电流-最大值(IDM)

152 A

DS 击穿电压-最小值

1000 V

信道型

N

雪崩能量等级（Eas）

3200 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

893 W

场效应管特性

-

反馈上限-最大值 (Crss)

224 pF