Microchip Technology APT10035LLLG

包装/外壳

TO-264-3

安装类型

通孔

供应商器件包装

TO-264 [L]

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

1 kV

Id - Continuous Drain Current

28 A

Rds On - Drain-Source Resistance

350 mOhms

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage

3 V

Qg - Gate Charge

186 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

690 W

Channel Mode

Enhancement

Factory Pack QuantityFactory Pack Quantity

1

Unit Weight

0.352740 oz

Continuous Drain Current Id

28

Package

Tube

Base Product Number

APT10035

Current - Continuous Drain (Id) @ 25℃

28A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

微芯片技术

Power Dissipation (Max)

690W (Tc)

Product Status

活跃

包装

Tube

操作温度

-55°C ~ 150°C (TJ)

系列

POWER MOS 7®

配置

Single

通道数量

1 Channel

功率耗散

690

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

350mOhm @ 14A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 2.5mA

输入电容(Ciss)(Max)@Vds

5185 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

186 nC @ 10 V

漏源电压 (Vdss)

1000 V

Vgs（最大值）

±30V

信道型

N

场效应管特性

-