Microchip Technology APT10050B2VFRG

安装类型

通孔

包装/外壳

TO-247-3 Variant

供应商器件包装

T-MAX™ [B2]

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

1 kV

Id - Continuous Drain Current

21 A

Rds On - Drain-Source Resistance

500 mOhms

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage

4 V

Qg - Gate Charge

335 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

520 W

Channel Mode

Enhancement

Factory Pack QuantityFactory Pack Quantity

1

Unit Weight

0.422002 oz

Continuous Drain Current Id

21

Package

Tube

Base Product Number

APT10050

Current - Continuous Drain (Id) @ 25℃

21A (Tc)

厂商

微芯片技术

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 2.5mA

包装

Tube

系列

POWER MOS V®

通道数量

1 Channel

功率耗散

520

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

500mOhm @ 500mA, 10V

输入电容(Ciss)(Max)@Vds

7900 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

500 nC @ 10 V

漏源电压 (Vdss)

1000 V

信道型

N

场效应管特性

-