Microchip Technology APT11F80B

包装/外壳

TO-247-3

安装类型

通孔

供应商器件包装

TO-247 [B]

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

800 V

Id - Continuous Drain Current

12 A

Rds On - Drain-Source Resistance

900 mOhms

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Qg - Gate Charge

80 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

337 W

Channel Mode

Enhancement

Factory Pack QuantityFactory Pack Quantity

1

Unit Weight

0.211644 oz

Continuous Drain Current Id

12

Package

Tube

Base Product Number

APT11F80

Current - Continuous Drain (Id) @ 25℃

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

微芯片技术

Power Dissipation (Max)

337W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

5V @ 1mA

包装

Tube

操作温度

-55°C ~ 150°C (TJ)

系列

POWER MOS 8™

配置

Single

通道数量

1 Channel

功率耗散

337

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

900mOhm @ 6A, 10V

输入电容(Ciss)(Max)@Vds

2471 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

80 nC @ 10 V

漏源电压 (Vdss)

800 V

Vgs（最大值）

±30V

信道型

N

场效应管特性

-