Microchip Technology APT11N80BC3G

包装/外壳

TO-247-3

安装类型

通孔

供应商器件包装

TO-247 [B]

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

800 V

Id - Continuous Drain Current

11 A

Rds On - Drain-Source Resistance

390 mOhms

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

3 V

Qg - Gate Charge

60 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

156 W

Channel Mode

Enhancement

Fall Time

7 ns

Factory Pack QuantityFactory Pack Quantity

1

Typical Turn-Off Delay Time

70 ns

Typical Turn-On Delay Time

25 ns

Unit Weight

0.211644 oz

Package

Tube

Base Product Number

APT11N80

Current - Continuous Drain (Id) @ 25℃

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

微芯片技术

Power Dissipation (Max)

156W (Tc)

Product Status

活跃

包装

Tube

操作温度

-55°C ~ 150°C (TJ)

系列

-

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

450mOhm @ 7.1A, 10V

不同 Id 时 Vgs(th)（最大值）

3.9V @ 680µA

输入电容(Ciss)(Max)@Vds

1585 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

60 nC @ 10 V

上升时间

15 ns

漏源电压 (Vdss)

800 V

Vgs（最大值）

±20V

场效应管特性

-

高度

5.31 mm

长度

21.46 mm

宽度

16.26 mm