Microchip Technology APT1201R5BVRG

安装类型

通孔

包装/外壳

TO-247-3

供应商器件包装

TO-247-3

厂商

微芯片技术

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 1mA

Power Dissipation (Max)

-

Base Product Number

APT1201

Id - Continuous Drain Current

10 A

Typical Turn-Off Delay Time

50 ns

RoHS

Details

Rds On - Drain-Source Resistance

1.5 Ohms

Qg - Gate Charge

285 nC

Brand

微芯片技术

Manufacturer

Microchip

Channel Mode

Enhancement

Mounting Styles

通孔

Factory Pack QuantityFactory Pack Quantity

1

Minimum Operating Temperature

- 55 C

Unit Weight

0.211644 oz

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Maximum Operating Temperature

+ 150 C

Transistor Polarity

N-Channel

Pd - Power Dissipation

370 W

Vgs th - Gate-Source Threshold Voltage

2 V

Typical Turn-On Delay Time

12 ns

Vds - Drain-Source Breakdown Voltage

1.2 kV

系列

-

操作温度

-

包装

Tube

子类别

MOSFETs

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.5Ohm @ 5A, 10V

输入电容(Ciss)(Max)@Vds

4440 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

28 nC @ 10 V

上升时间

10 ns

漏源电压 (Vdss)

1200 V

Vgs（最大值）

-

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET