Microchip Technology APT1201R5BVRG

包装/外壳

TO-247-3

安装类型

通孔

供应商器件包装

TO-247-3

Base Product Number

APT1201

Power Dissipation (Max)

-

Drive Voltage (Max Rds On, Min Rds On)

10V

Current - Continuous Drain (Id) @ 25℃

10A (Tc)

Product Status

活跃

Package

Tube

厂商

微芯片技术

Vds - Drain-Source Breakdown Voltage

1.2 kV

Typical Turn-On Delay Time

12 ns

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

370 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.211644 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

Microchip

Brand

微芯片技术

Qg - Gate Charge

285 nC

Rds On - Drain-Source Resistance

1.5 Ohms

RoHS

Details

Typical Turn-Off Delay Time

50 ns

Id - Continuous Drain Current

10 A

操作温度

-

系列

-

包装

Tube

子类别

MOSFETs

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.5Ohm @ 5A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 1mA

输入电容(Ciss)(Max)@Vds

4440 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

28 nC @ 10 V

上升时间

10 ns

漏源电压 (Vdss)

1200 V

Vgs（最大值）

-

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET