Microchip Technology APT13F120S

生命周期状态

Production (Last Updated: 2 months ago)

包装/外壳

D3PAK-3

安装类型

表面贴装

底架

表面贴装

供应商器件包装

D3Pak

RoHS

Details

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

1.2 kV

Id - Continuous Drain Current

14 A

Rds On - Drain-Source Resistance

910 mOhms

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Qg - Gate Charge

145 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

625 W

Channel Mode

Enhancement

Fall Time

24 ns

Forward Transconductance - Min

15 S

Factory Pack QuantityFactory Pack Quantity

1

Typical Turn-Off Delay Time

85 ns

Typical Turn-On Delay Time

26 ns

Unit Weight

0.218699 oz

Continuous Drain Current Id

14

Package

Tube

Base Product Number

APT13F120

Current - Continuous Drain (Id) @ 25℃

14A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

微芯片技术

Power Dissipation (Max)

625W (Tc)

Product Status

活跃

包装

Tube

操作温度

-55°C ~ 150°C (TJ)

系列

POWER MOS 8™

最高工作温度

150 °C

最小工作温度

-55 °C

最大功率耗散

625 W

配置

Single

通道数量

1 Channel

功率耗散

625

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.2Ohm @ 7A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 1mA

输入电容(Ciss)(Max)@Vds

4765 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

145 nC @ 10 V

上升时间

15 ns

漏源电压 (Vdss)

1200 V

Vgs（最大值）

±30V

晶体管类型

1 N-Channel

连续放电电流(ID)

14 A

输入电容

4.765 nF

信道型

N

场效应管特性

-

最大rds

1.2 Ω