Microchip Technology APT20M16LFLLG

生命周期状态

Production (Last Updated: 1 month ago)

包装/外壳

TO-264-3

底架

通孔

安装类型

通孔

供应商器件包装

TO-264 [L]

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

200 V

Id - Continuous Drain Current

100 A

Rds On - Drain-Source Resistance

16 mOhms

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage

3 V

Qg - Gate Charge

140 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

694 W

Channel Mode

Enhancement

Factory Pack QuantityFactory Pack Quantity

1

Unit Weight

0.352740 oz

Schedule B

8541290080, 8541290080/8541290080, 8541290080/8541290080/8541290080, 8541290080/8541290080/8541290080/8541290080

Number of Elements

1

Voltage Rating (DC)

200 V

Turn Off Delay Time

29 ns

Package

Tube

Base Product Number

APT20M16

Current - Continuous Drain (Id) @ 25℃

100A (Tc)

厂商

微芯片技术

Product Status

活跃

包装

Tube

系列

POWER MOS 7®

最高工作温度

150 °C

最小工作温度

-55 °C

额定电流

100 A

配置

Single

通道数量

1 Channel

功率耗散

694 W

接通延迟时间

15 ns

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

16mOhm @ 50A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 2.5mA

输入电容(Ciss)(Max)@Vds

7220 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

140 nC @ 10 V

上升时间

31 ns

漏源电压 (Vdss)

200 V

连续放电电流(ID)

100 A

栅极至源极电压(Vgs)

30 V

输入电容

7.22 nF

场效应管特性

-

辐射硬化

无

无铅

无铅