Microchip Technology APT20M18LVRG

包装/外壳

TO-247-3

安装类型

通孔

供应商器件包装

TO-264 [L]

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

200 V

Id - Continuous Drain Current

100 A

Rds On - Drain-Source Resistance

18 mOhms

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage

2 V

Qg - Gate Charge

330 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

625 W

Channel Mode

Enhancement

Factory Pack QuantityFactory Pack Quantity

1

Unit Weight

0.211644 oz

Continuous Drain Current Id

100

Package

Tube

Base Product Number

APT20M18

Current - Continuous Drain (Id) @ 25℃

100A (Tc)

厂商

微芯片技术

Product Status

活跃

包装

Tube

系列

POWER MOS V®

配置

Single

通道数量

1 Channel

功率耗散

625

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

18mOhm @ 50A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 2.5mA

输入电容(Ciss)(Max)@Vds

9880 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

330 nC @ 10 V

漏源电压 (Vdss)

200 V

信道型

N

场效应管特性

-