Microchip Technology APT20M20B2FLLG

包装/外壳

T-MAX-3

安装类型

通孔

底架

通孔

引脚数

3

供应商器件包装

T-MAX™ [B2]

Unit Weight

0.208116 oz

Factory Pack QuantityFactory Pack Quantity

1

Channel Mode

Enhancement

Pd - Power Dissipation

568 W

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 55 C

Qg - Gate Charge

110 nC

Vgs th - Gate-Source Threshold Voltage

3 V

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Rds On - Drain-Source Resistance

20 mOhms

Id - Continuous Drain Current

100 A

Vds - Drain-Source Breakdown Voltage

200 V

Transistor Polarity

N-Channel

Mounting Styles

通孔

RoHS

Details

Package

Tube

Base Product Number

APT20M20

Current - Continuous Drain (Id) @ 25℃

100A (Tc)

厂商

微芯片技术

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

5V @ 2.5mA

Number of Elements

1

Voltage Rating (DC)

200 V

Turn Off Delay Time

26 ns

包装

Tube

系列

POWER MOS V®

零件状态

Production (Last Updated: 2 months ago)

最高工作温度

150 °C

最小工作温度

-55 °C

额定电流

100 A

配置

Single

通道数量

1 Channel

功率耗散

568 W

接通延迟时间

13 ns

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

20mOhm @ 50A, 10V

输入电容(Ciss)(Max)@Vds

6850 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

110 nC @ 10 V

上升时间

40 ns

漏源电压 (Vdss)

200 V

连续放电电流(ID)

100 A

栅极至源极电压(Vgs)

30 V

输入电容

6.85 nF

场效应管特性

-

辐射硬化

无

无铅

无铅