Microchip Technology APT20M38SVRG
- 收藏
- 对比
APT20M38SVRG
1610-APT20M38SVRG
晶体管 - FET,MOSFET - 单个
D3PAK-3
大陆
立即发货

MOSFET FG, MOSFET, 200V, 0.038_OHM, D3, TO-268, RoHSView in Development Tools Selector
1最小包装量--
APT20M38SVRG详情
Microchip Technology APT20M38SVRG重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
D3PAK-3
安装类型
表面贴装
表面安装
YES
供应商器件包装
D3 [S]
终端数量
2
晶体管元件材料
SILICON
RoHS
Details
Mounting Styles
SMD/SMT
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
200 V
Id - Continuous Drain Current
67 A
Rds On - Drain-Source Resistance
38 mOhms
Vgs - Gate-Source Voltage
- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage
4 V
Qg - Gate Charge
148 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
370 W
Channel Mode
Enhancement
Tradename
功率 MOS V
Fall Time
10 ns
Factory Pack QuantityFactory Pack Quantity
1
Typical Turn-Off Delay Time
48 ns
Typical Turn-On Delay Time
14 ns
Unit Weight
0.218699 oz
Continuous Drain Current Id
67
Package
Tube
Base Product Number
APT20M38
Current - Continuous Drain (Id) @ 25℃
67A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
厂商
微芯片技术
Power Dissipation (Max)
370W (Tc)
Product Status
活跃
Package Description
D3PAK-3
Package Style
小概要
Package Body Material
PLASTIC/EPOXY
Reflow Temperature-Max (s)
30
Operating Temperature-Max
150 °C
Rohs Code
有
Manufacturer Part Number
APT20M38SVRG
Package Shape
RECTANGULAR
Number of Elements
1
Part Life Cycle Code
活跃
Ihs Manufacturer
MICROSEMI CORP
Risk Rank
1.4
Drain Current-Max (ID)
67 A
包装
Tube
操作温度
-55°C ~ 150°C (TJ)
系列
POWER MOS V®
无铅代码
有
ECCN 代码
EAR99
端子表面处理
Pure Matte Tin (Sn)
端子位置
SINGLE
终端形式
鸥翼
峰值回流焊温度(摄氏度)
245
Reach合规守则
unknown
引脚数量
3
JESD-30代码
R-PSSO-G2
资历状况
不合格
配置
SINGLE WITH BUILT-IN DIODE
通道数量
1 Channel
操作模式
增强型MOSFET
功率耗散
370
箱体转运
DRAIN
场效应管类型
N-Channel
晶体管应用
SWITCHING
Rds On(Max)@Id,Vgs
38mOhm @ 500mA, 10V
不同 Id 时 Vgs(th)(最大值)
4V @ 1mA
输入电容(Ciss)(Max)@Vds
6120 pF @ 25 V
门极电荷(Qg)(最大)@Vgs
225 nC @ 10 V
上升时间
21 ns
漏源电压 (Vdss)
200 V
Vgs(最大值)
±30V
极性/通道类型
N-CHANNEL
漏极-源极导通最大电阻
0.038 Ω
脉冲漏极电流-最大值(IDM)
268 A
DS 击穿电压-最小值
200 V
信道型
N
雪崩能量等级(Eas)
1300 mJ
场效应管技术
METAL-OXIDE SEMICONDUCTOR
场效应管特性
-
高度
5.08 mm
长度
16.05 mm
宽度
13.99 mm
APT20M38SVRG拓展信息
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology







哦! 它是空的。