Microchip Technology APT30F50B

包装/外壳

TO-247-3

安装类型

通孔

供应商器件包装

TO-247 [B]

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

500 V

Id - Continuous Drain Current

30 A

Rds On - Drain-Source Resistance

170 mOhms

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage

4 V

Qg - Gate Charge

115 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

415 W

Channel Mode

Enhancement

Tradename

Power MOS 8

Fall Time

17 ns

Forward Transconductance - Min

22 S

Factory Pack QuantityFactory Pack Quantity

1

Typical Turn-Off Delay Time

50 ns

Typical Turn-On Delay Time

20 ns

Unit Weight

0.211644 oz

Package

Tube

Base Product Number

APT30F50

Current - Continuous Drain (Id) @ 25℃

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

微芯片技术

Power Dissipation (Max)

415W (Tc)

Product Status

活跃

包装

Tube

操作温度

-55°C ~ 150°C (TJ)

系列

POWER MOS 8™

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

190mOhm @ 14A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 1mA

输入电容(Ciss)(Max)@Vds

4525 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

115 nC @ 10 V

上升时间

23 ns

漏源电压 (Vdss)

500 V

Vgs（最大值）

±30V

场效应管特性

-

高度

5.31 mm

长度

21.46 mm

宽度

16.26 mm