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Microchip Technology APT30N60BC6
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APT30N60BC6
1610-APT30N60BC6
晶体管 - FET,MOSFET - 单个
TO-247-3
大陆
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MOSFET FG, MOSFET, 600V, 30A, TO-247View in Development Tools Selector
--最小包装量--
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APT30N60BC6详情
Microchip Technology APT30N60BC6重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-247-3
供应商器件包装
TO-247 [B]
Mounting Styles
通孔
Id - Continuous Drain Current
30 A
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Channel Mode
Enhancement
Fall Time
48 ns
Factory Pack QuantityFactory Pack Quantity
1
Continuous Drain Current Id
30
Base Product Number
APT30N60
Current - Continuous Drain (Id) @ 25℃
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
厂商
微芯片技术
RoHS
Details
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
600 V
Rds On - Drain-Source Resistance
125 mOhms
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage
3.5 V
Qg - Gate Charge
88 nC
Pd - Power Dissipation
219 W
Typical Turn-Off Delay Time
74 ns
Typical Turn-On Delay Time
9 ns
Package
Tube
Power Dissipation (Max)
219W (Tc)
Product Status
活跃
包装
Tube
操作温度
-55°C ~ 150°C (TJ)
系列
CoolMOS™
配置
Single
通道数量
1 Channel
功率耗散
219
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
125mOhm @ 14.5A, 10V
不同 Id 时 Vgs(th)(最大值)
3.5V @ 960µA
输入电容(Ciss)(Max)@Vds
2267 pF @ 25 V
门极电荷(Qg)(最大)@Vgs
88 nC @ 10 V
上升时间
17 ns
漏源电压 (Vdss)
600 V
Vgs(最大值)
±20V
信道型
N
场效应管特性
-
APT30N60BC6拓展信息
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