Microchip Technology APT34M60S

包装/外壳

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

安装类型

表面贴装

表面安装

YES

供应商器件包装

D3PAK

终端数量

2

晶体管元件材料

SILICON

Power Dissipation (Max)

624W (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Current - Continuous Drain (Id) @ 25℃

36A (Tc)

Product Status

活跃

Package

Tube

厂商

微芯片技术

Base Product Number

APT34M60

Continuous Drain Current Id

36

Vds - Drain-Source Breakdown Voltage

600 V

Typical Turn-On Delay Time

37 ns

Vgs th - Gate-Source Threshold Voltage

5 V

Pd - Power Dissipation

624 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.218699 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

SMD/SMT

Forward Transconductance - Min

32 S

Channel Mode

Enhancement

Manufacturer

Microchip

Brand

Microchip Technology / Atmel

Qg - Gate Charge

165 nC

Rds On - Drain-Source Resistance

190 mOhms

RoHS

Details

Typical Turn-Off Delay Time

115 ns

Id - Continuous Drain Current

36 A

Package Description

ROHS COMPLIANT, D3PAK-3/2

Package Style

小概要

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

30

Operating Temperature-Max

150 °C

Rohs Code

有

Manufacturer Part Number

APT34M60S

Package Shape

RECTANGULAR

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

MICROSEMI CORP

Risk Rank

5.3

Drain Current-Max (ID)

36 A

操作温度

-55°C ~ 150°C (TJ)

包装

Tube

无铅代码

有

ECCN 代码

EAR99

端子表面处理

Pure Matte Tin (Sn)

附加功能

AVALANCHE RATED, HIGH RELIABILITY

子类别

MOSFETs

端子位置

SINGLE

终端形式

鸥翼

峰值回流焊温度（摄氏度）

245

Reach合规守则

unknown

JESD-30代码

R-PSSO-G2

资历状况

不合格

配置

Single

通道数量

1 Channel

操作模式

增强型MOSFET

箱体转运

DRAIN

场效应管类型

N-Channel

晶体管应用

SWITCHING

Rds On(Max)@Id,Vgs

190mOhm @ 17A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 1mA

输入电容(Ciss)(Max)@Vds

6640 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

165 nC @ 10 V

上升时间

43 ns

漏源电压 (Vdss)

600 V

Vgs（最大值）

±30V

极性/通道类型

N-CHANNEL

产品类别

MOSFET

晶体管类型

1 N-Channel

最大漏极电流 (Abs) (ID)

34 A

漏极-源极导通最大电阻

0.19 Ω

脉冲漏极电流-最大值(IDM)

124 A

DS 击穿电压-最小值

600 V

信道型

N

雪崩能量等级（Eas）

930 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

624 W

场效应管特性

-

产品类别

MOSFET