Microchip Technology APT37F50B

包装/外壳

TO-247-3

安装类型

通孔

底架

通孔

供应商器件包装

TO-247 [B]

质量

38.000013 g

Unit Weight

0.211644 oz

Typical Turn-On Delay Time

25 ns

Typical Turn-Off Delay Time

65 ns

Factory Pack QuantityFactory Pack Quantity

1

Forward Transconductance - Min

27 S

Fall Time

21 ns

Tradename

Power MOS 8

Channel Mode

Enhancement

Pd - Power Dissipation

520 W

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 55 C

Qg - Gate Charge

145 nC

Vgs th - Gate-Source Threshold Voltage

4 V

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Rds On - Drain-Source Resistance

130 mOhms

Id - Continuous Drain Current

37 A

Vds - Drain-Source Breakdown Voltage

500 V

Transistor Polarity

N-Channel

Mounting Styles

通孔

RoHS

Details

Continuous Drain Current Id

37

Package

Tube

Base Product Number

APT37F50

Current - Continuous Drain (Id) @ 25℃

37A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

微芯片技术

Power Dissipation (Max)

520W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

5V @ 1mA

Number of Elements

1

Voltage Rating (DC)

500 V

Turn Off Delay Time

65 ns

包装

Tube

操作温度

-55°C ~ 150°C (TJ)

系列

-

零件状态

Production (Last Updated: 2 months ago)

最高工作温度

150 °C

最小工作温度

-55 °C

最大功率耗散

520 W

额定电流

37 A

配置

Single

通道数量

1 Channel

功率耗散

520

接通延迟时间

25 ns

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

150mOhm @ 18A, 10V

输入电容(Ciss)(Max)@Vds

5710 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

145 nC @ 10 V

上升时间

29 ns

漏源电压 (Vdss)

500 V

Vgs（最大值）

±30V

连续放电电流(ID)

37 A

栅极至源极电压(Vgs)

30 V

漏源击穿电压

500 V

输入电容

5.71 nF

信道型

N

场效应管特性

-

漏源电阻

130 mΩ

最大rds

150 mΩ

宽度

16.26 mm

长度

21.46 mm

高度

5.31 mm

辐射硬化

无

无铅

无铅