Microchip Technology APT40GR120S
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APT40GR120S
1610-APT40GR120S
晶体管 - IGBT - 单个
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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IGBT Transistors FG, IGBT, 1200V, 40A, TO-268View in Development Tools Selector
--最小包装量--
APT40GR120S详情
Microchip Technology APT40GR120S重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
供应商器件包装
D3Pak
RoHS
Details
Mounting Styles
SMD/SMT
Collector- Emitter Voltage VCEO Max
1.2 kV
Collector-Emitter Saturation Voltage
3.2 V
Maximum Gate Emitter Voltage
- 30 V, + 30 V
Continuous Collector Current at 25 C
88 A
Pd - Power Dissipation
500 W
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Factory Pack QuantityFactory Pack Quantity
1
Unit Weight
0.218699 oz
Package
Tube
Current-Collector (Ic) (Max)
88 A
Base Product Number
APT40GR120
厂商
微芯片技术
Product Status
活跃
Test Conditions
600V, 40A, 4.3Ohm, 15V
包装
Tube
操作温度
-55°C ~ 150°C (TJ)
系列
-
配置
Single
功率耗散
500
输入类型
Standard
功率 - 最大
500 W
电压 - 集射极击穿(最大值)
1200 V
不同 Vge、Ic 时 Vce(on)(最大值)
3.2V @ 15V, 40A
连续集电极电流
88
IGBT类型
NPT
闸门收费
210 nC
集极脉冲电流(Icm)
160 A
Td(开/关)@25°C
22ns/163ns
开关能量
1.38mJ (on), 906µJ (off)
APT40GR120S拓展信息
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