Microchip Technology APT47N65BC3G

生命周期状态

Obsolete (Last Updated: 2 years ago)

包装/外壳

TO-247-3

底架

通孔

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

650 V

Id - Continuous Drain Current

47 A

Rds On - Drain-Source Resistance

70 mOhms

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

2.1 V

Qg - Gate Charge

250 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

417 W

Channel Mode

Enhancement

Fall Time

84 ns

Unit Weight

0.211644 oz

Typical Turn-On Delay Time

18 ns

Typical Turn-Off Delay Time

295 ns

Factory Pack QuantityFactory Pack Quantity

1

Number of Elements

1

Turn Off Delay Time

110 ns

包装

Tube

最高工作温度

150 °C

最小工作温度

-55 °C

最大功率耗散

417 W

配置

Single

通道数量

1 Channel

功率耗散

417 W

接通延迟时间

18 ns

上升时间

28 ns

漏源电压 (Vdss)

650 V

连续放电电流(ID)

47 A

栅极至源极电压(Vgs)

20 V

输入电容

7.015 nF

最大rds

70 mΩ

辐射硬化

无

无铅

无铅