Microchip Technology APT4F120S

安装类型

表面贴装

包装/外壳

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

供应商器件包装

D3PAK

厂商

微芯片技术

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

175W (Tc)

Base Product Number

APT4F120

Vds - Drain-Source Breakdown Voltage

1.2 kV

Typical Turn-On Delay Time

7.4 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

175 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.218699 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

SMD/SMT

Forward Transconductance - Min

4.5 S

Channel Mode

Enhancement

Manufacturer

Microchip

Brand

Microchip Technology / Atmel

Qg - Gate Charge

43 nC

Rds On - Drain-Source Resistance

4.2 Ohms

RoHS

Details

Typical Turn-Off Delay Time

24 ns

Id - Continuous Drain Current

4 A

操作温度

-

包装

Tube

子类别

MOSFETs

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

4.2Ohm @ 2A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 500μA

输入电容(Ciss)(Max)@Vds

1385 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

43 nC @ 10 V

上升时间

4.4 ns

漏源电压 (Vdss)

1200 V

Vgs（最大值）

±30V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET