Microchip Technology APT5024SLLG/TR

安装类型

表面贴装

包装/外壳

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

表面安装

YES

供应商器件包装

D3PAK

终端数量

2

晶体管元件材料

SILICON

厂商

微芯片技术

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

22A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

265W (Tc)

Base Product Number

APT5024

Vds - Drain-Source Breakdown Voltage

500 V

Typical Turn-On Delay Time

8 ns

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

265 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.218699 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

400

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Microchip

Brand

微芯片技术

Qg - Gate Charge

43 nC

Rds On - Drain-Source Resistance

240 mOhms

RoHS

Details

Typical Turn-Off Delay Time

18 ns

Id - Continuous Drain Current

22 A

Package Description

SMALL OUTLINE, R-PSSO-G2

Package Style

小概要

Package Body Material

PLASTIC/EPOXY

Operating Temperature-Min

-55 °C

Operating Temperature-Max

150 °C

Manufacturer Part Number

APT5024SLLG/TR

Package Shape

RECTANGULAR

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

MICROCHIP TECHNOLOGY INC

Risk Rank

5.65

Drain Current-Max (ID)

22 A

操作温度

-55°C ~ 150°C (TJ)

包装

Reel

子类别

MOSFETs

端子位置

SINGLE

终端形式

鸥翼

Reach合规守则

unknown

JESD-30代码

R-PSSO-G2

配置

Single

通道数量

1 Channel

操作模式

增强型MOSFET

箱体转运

DRAIN

场效应管类型

N-Channel

晶体管应用

SWITCHING

Rds On(Max)@Id,Vgs

240mOhm @ 11A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 1mA

输入电容(Ciss)(Max)@Vds

1900 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

43 nC @ 10 V

上升时间

6 ns

漏源电压 (Vdss)

500 V

Vgs（最大值）

±30V

极性/通道类型

N-CHANNEL

产品类别

MOSFET

晶体管类型

1 N-Channel

最大漏极电流 (Abs) (ID)

22 A

漏极-源极导通最大电阻

0.24 Ω

脉冲漏极电流-最大值(IDM)

88 A

DS 击穿电压-最小值

500 V

雪崩能量等级（Eas）

960 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

265 W

场效应管特性

-

反馈上限-最大值 (Crss)

27 pF

产品类别

MOSFET