Microchip Technology APT50M75B2LLG

包装/外壳

T-MAX-3

安装类型

通孔

底架

通孔

引脚数

3

供应商器件包装

T-MAX™ [B2]

Rds On - Drain-Source Resistance

75 mOhms

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage

3 V

Qg - Gate Charge

125 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

570 W

Channel Mode

Enhancement

Factory Pack QuantityFactory Pack Quantity

1

Unit Weight

0.208116 oz

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

500 V

Id - Continuous Drain Current

57 A

RoHS

Details

Mounting Styles

通孔

Continuous Drain Current Id

57

Package

Tube

Base Product Number

APT50M75

Current - Continuous Drain (Id) @ 25℃

57A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

微芯片技术

Power Dissipation (Max)

570W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

5V @ 2.5mA

Number of Elements

1

Voltage Rating (DC)

500 V

Turn Off Delay Time

21 ns

包装

Tube

操作温度

-55°C ~ 150°C (TJ)

系列

POWER MOS 7®

零件状态

Production (Last Updated: 2 months ago)

最高工作温度

150 °C

最小工作温度

-55 °C

最大功率耗散

570 W

额定电流

57 A

配置

Single

通道数量

1 Channel

功率耗散

570 W

接通延迟时间

8 ns

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

75mOhm @ 28.5A, 10V

输入电容(Ciss)(Max)@Vds

5590 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

125 nC @ 10 V

上升时间

19 ns

漏源电压 (Vdss)

500 V

Vgs（最大值）

±30V

连续放电电流(ID)

57 A

栅极至源极电压(Vgs)

30 V

输入电容

5.59 nF

信道型

N

场效应管特性

-

最大rds

75 mΩ

辐射硬化

无

无铅

无铅