Microchip Technology APT50M75LLLG
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APT50M75LLLG
1610-APT50M75LLLG
晶体管 - FET,MOSFET - 单个
TO-264-3
大陆
立即发货

MOSFET POWER MOS 7 MOSFETView in Development Tools Selector
--最小包装量--
APT50M75LLLG详情
Microchip Technology APT50M75LLLG重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-264-3
安装类型
通孔
供应商器件包装
TO-264 [L]
RoHS
Details
Mounting Styles
通孔
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
500 V
Id - Continuous Drain Current
57 A
Rds On - Drain-Source Resistance
75 mOhms
Vgs - Gate-Source Voltage
- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage
3 V
Qg - Gate Charge
125 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
570 W
Channel Mode
Enhancement
Fall Time
3 ns
Factory Pack QuantityFactory Pack Quantity
1
Typical Turn-Off Delay Time
21 ns
Typical Turn-On Delay Time
8 ns
Unit Weight
0.352740 oz
Package
Tube
Base Product Number
APT50M75
Current - Continuous Drain (Id) @ 25℃
57A (Tc)
厂商
微芯片技术
Product Status
活跃
包装
Tube
系列
POWER MOS 7®
配置
Single
通道数量
1 Channel
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
75mOhm @ 28.5A, 10V
不同 Id 时 Vgs(th)(最大值)
5V @ 2.5mA
输入电容(Ciss)(Max)@Vds
5590 pF @ 25 V
门极电荷(Qg)(最大)@Vgs
125 nC @ 10 V
上升时间
19 ns
漏源电压 (Vdss)
500 V
晶体管类型
1 N-Channel
场效应管特性
-
APT50M75LLLG拓展信息
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