Microchip Technology APT56F50L

生命周期状态

Production (Last Updated: 2 months ago)

包装/外壳

TO-264-3

安装类型

通孔

底架

通孔

供应商器件包装

TO-264 [L]

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

500 V

Id - Continuous Drain Current

56 A

Rds On - Drain-Source Resistance

100 mOhms

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage

4 V

Qg - Gate Charge

220 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

780 W

Channel Mode

Enhancement

Fall Time

33 ns

Forward Transconductance - Min

43 S

Factory Pack QuantityFactory Pack Quantity

1

Typical Turn-Off Delay Time

100 ns

Typical Turn-On Delay Time

38 ns

Unit Weight

0.352740 oz

Package

Tube

Base Product Number

APT56F50

Current - Continuous Drain (Id) @ 25℃

56A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

微芯片技术

Power Dissipation (Max)

780W (Tc)

Product Status

活跃

Number of Elements

1

Turn Off Delay Time

100 ns

包装

Tube

操作温度

-55°C ~ 150°C (TJ)

系列

POWER MOS 8™

最高工作温度

150 °C

最小工作温度

-55 °C

最大功率耗散

780 W

配置

Single

通道数量

1 Channel

功率耗散

780 W

接通延迟时间

38 ns

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

100mOhm @ 28A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 2.5mA

输入电容(Ciss)(Max)@Vds

8800 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

220 nC @ 10 V

上升时间

45 ns

漏源电压 (Vdss)

500 V

Vgs（最大值）

±30V

连续放电电流(ID)

56 A

栅极至源极电压(Vgs)

30 V

输入电容

8.8 nF

场效应管特性

-

最大rds

100 mΩ

辐射硬化

无