Microchip Technology APT5F100K

包装/外壳

TO-220-3

表面安装

NO

终端数量

3

晶体管元件材料

SILICON

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

1 kV

Id - Continuous Drain Current

5 A

Rds On - Drain-Source Resistance

2.8 Ohms

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage

4 V

Qg - Gate Charge

43 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

225 W

Channel Mode

Enhancement

Fall Time

21 ns

Forward Transconductance - Min

5.6 S

Factory Pack QuantityFactory Pack Quantity

163

Typical Turn-Off Delay Time

72 ns

Typical Turn-On Delay Time

23 ns

Unit Weight

0.068784 oz

Package Description

ROHS COMPLIANT, 3 PIN

Package Style

FLANGE MOUNT

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

未说明

Operating Temperature-Max

150 °C

Rohs Code

有

Manufacturer Part Number

APT5F100K

Package Shape

RECTANGULAR

Number of Elements

1

Part Life Cycle Code

Obsolete

Ihs Manufacturer

MICROSEMI CORP

Risk Rank

5.84

Part Package Code

TO-220AB

Drain Current-Max (ID)

32 A

JESD-609代码

e1

无铅代码

有

端子表面处理

锡银铜

附加功能

FAST SWITCHING, AVALANCHE RATED

端子位置

SINGLE

终端形式

THROUGH-HOLE

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

引脚数量

3

JESD-30代码

R-PSFM-T3

资历状况

不合格

配置

Single

通道数量

1 Channel

操作模式

增强型MOSFET

箱体转运

DRAIN

晶体管应用

SWITCHING

上升时间

21 ns

极性/通道类型

N-CHANNEL

JEDEC-95代码

TO-220AB

最大漏极电流 (Abs) (ID)

5 A

漏极-源极导通最大电阻

2.9 Ω

脉冲漏极电流-最大值(IDM)

20 A

DS 击穿电压-最小值

1000 V

雪崩能量等级（Eas）

310 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

225 W