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价格梯度
内地含税价
1
¥254.803803
10
¥240.380949
100
¥226.774482
500
¥213.938187
1000
¥201.828479
Microchip Technology APT6010B2FLLG
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APT6010B2FLLG
1610-APT6010B2FLLG
晶体管 - FET,MOSFET - 单个
T-MAX-3
大陆
立即发货

MOSFET FG, FREDFET, 600V, TO-247 T-MAX, RoHSView in Development Tools Selector
--最小包装量--
¥
总价: ¥
APT6010B2FLLG详情
Microchip Technology APT6010B2FLLG重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
T-MAX-3
安装类型
通孔
供应商器件包装
T-MAX™ [B2]
RoHS
Details
Mounting Styles
通孔
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
600 V
Id - Continuous Drain Current
54 A
Unit Weight
0.208116 oz
Factory Pack QuantityFactory Pack Quantity
1
Channel Mode
Enhancement
Pd - Power Dissipation
690 W
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Qg - Gate Charge
150 nC
Vgs th - Gate-Source Threshold Voltage
3 V
Vgs - Gate-Source Voltage
- 30 V, + 30 V
Rds On - Drain-Source Resistance
100 mOhms
Package
Tube
Base Product Number
APT6010
Current - Continuous Drain (Id) @ 25℃
54A (Tc)
厂商
微芯片技术
Product Status
活跃
包装
Tube
系列
POWER MOS 7®
配置
Single
通道数量
1 Channel
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
100mOhm @ 27A, 10V
不同 Id 时 Vgs(th)(最大值)
5V @ 2.5mA
输入电容(Ciss)(Max)@Vds
6710 pF @ 25 V
门极电荷(Qg)(最大)@Vgs
150 nC @ 10 V
漏源电压 (Vdss)
600 V
场效应管特性
-
APT6010B2FLLG拓展信息
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