注:图像仅供参考,请参阅产品规格
技术文档

价格梯度
内地含税价
1
¥662.253214
10
¥624.767179
100
¥589.403
500
¥556.040566
1000
¥524.566571
Microchip Technology APT8011JLL
- 收藏
- 对比
APT8011JLL
1610-APT8011JLL
晶体管 - FET,MOSFET - 单个
SOT-227-4, miniBLOC
大陆
立即发货

MOSFET FG, MOSFET, 800V, 0.11_OHM, SOT-227View in Development Tools Selector
--最小包装量--
¥
总价: ¥
APT8011JLL详情
Microchip Technology APT8011JLL重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
底座安装
包装/外壳
SOT-227-4, miniBLOC
供应商器件包装
ISOTOP®
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
650 W
Channel Mode
Enhancement
Factory Pack QuantityFactory Pack Quantity
1
Unit Weight
2.260479 oz
Qg - Gate Charge
285 nC
Vgs th - Gate-Source Threshold Voltage
5 V
Vgs - Gate-Source Voltage
- 30 V, + 30 V
Rds On - Drain-Source Resistance
110 mOhms
Id - Continuous Drain Current
51 A
Vds - Drain-Source Breakdown Voltage
800 V
Transistor Polarity
N-Channel
Mounting Styles
螺钉安装
RoHS
Details
Continuous Drain Current Id
51
Package
Tube
Base Product Number
APT8011
Current - Continuous Drain (Id) @ 25℃
51A (Tc)
厂商
微芯片技术
Product Status
活跃
包装
Tube
系列
POWER MOS 7®
通道数量
1 Channel
功率耗散
694
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
110mOhm @ 25.5A, 10V
不同 Id 时 Vgs(th)(最大值)
5V @ 5mA
输入电容(Ciss)(Max)@Vds
9480 pF @ 25 V
门极电荷(Qg)(最大)@Vgs
650 nC @ 10 V
漏源电压 (Vdss)
800 V
信道型
N
场效应管特性
-
APT8011JLL拓展信息
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology






哦! 它是空的。