Microchip Technology APT8020B2LLG

包装/外壳

T-MAX-3

安装类型

通孔

供应商器件包装

T-MAX™ [B2]

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

800 V

Id - Continuous Drain Current

38 A

Rds On - Drain-Source Resistance

200 mOhms

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage

5 V

Qg - Gate Charge

195 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

694 W

Channel Mode

Enhancement

Tradename

Power MOS 7

Fall Time

9 ns

Factory Pack QuantityFactory Pack Quantity

1

Typical Turn-Off Delay Time

39 ns

Typical Turn-On Delay Time

12 ns

Unit Weight

0.208116 oz

Continuous Drain Current Id

38

Package

Tube

Base Product Number

APT8020

Current - Continuous Drain (Id) @ 25℃

38A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

微芯片技术

Power Dissipation (Max)

694W (Tc)

Product Status

活跃

包装

Tube

操作温度

-55°C ~ 150°C (TJ)

系列

POWER MOS 7®

配置

Single

通道数量

1 Channel

功率耗散

694

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

200mOhm @ 19A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 2.5mA

输入电容(Ciss)(Max)@Vds

5200 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

195 nC @ 10 V

上升时间

14 ns

漏源电压 (Vdss)

800 V

Vgs（最大值）

±30V

信道型

N

场效应管特性

-

高度

5.21 mm

长度

26.49 mm

宽度

20.5 mm