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价格梯度
内地含税价
1
¥95.097961
10
¥89.715061
100
¥84.636844
500
¥79.846084
1000
¥75.326491
Microchip Technology APT8056BVRG
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APT8056BVRG
1610-APT8056BVRG
晶体管 - FET,MOSFET - 单个
TO-247-3
大陆
立即发货

MOSFET FG, MOSFET, 800V, TO-247, RoHSView in Development Tools Selector
--最小包装量--
¥
总价: ¥
APT8056BVRG详情
Microchip Technology APT8056BVRG重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-247-3
安装类型
通孔
供应商器件包装
TO-247 [B]
RoHS
Details
Mounting Styles
通孔
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
800 V
Id - Continuous Drain Current
16 A
Rds On - Drain-Source Resistance
560 mOhms
Vgs - Gate-Source Voltage
- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage
2 V
Qg - Gate Charge
75 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
370 W
Channel Mode
Enhancement
Factory Pack QuantityFactory Pack Quantity
1
Unit Weight
0.211644 oz
Continuous Drain Current Id
16
Package
Tube
Base Product Number
APT8056
Current - Continuous Drain (Id) @ 25℃
16A (Tc)
厂商
微芯片技术
Product Status
活跃
包装
Tube
系列
POWER MOS V®
配置
Single
通道数量
1 Channel
功率耗散
370
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
560mOhm @ 500mA, 10V
不同 Id 时 Vgs(th)(最大值)
4V @ 1mA
输入电容(Ciss)(Max)@Vds
4440 pF @ 25 V
门极电荷(Qg)(最大)@Vgs
275 nC @ 10 V
漏源电压 (Vdss)
800 V
信道型
N
场效应管特性
-
APT8056BVRG拓展信息
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