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¥341.66258
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¥322.323184
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¥304.078479
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¥286.866494
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¥270.628766
Microchip Technology MSC017SMA120B4
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MSC017SMA120B4
1610-MSC017SMA120B4
晶体管 - FET,MOSFET - 单个
TO-247-4
大陆
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MOSFET SIC 1200V 17 MOHM TO-247
--最小包装量--
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MSC017SMA120B4详情
Microchip Technology MSC017SMA120B4重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-247-4
供应商器件包装
TO-247-4
厂商
微芯片技术
Package
Bulk
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
113A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Power Dissipation (Max)
455W (Tc)
Base Product Number
MSC017SMA
Vds - Drain-Source Breakdown Voltage
1.2 kV
Typical Turn-On Delay Time
29 ns
Vgs th - Gate-Source Threshold Voltage
2.7 V
Pd - Power Dissipation
455 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 175 C
Vgs - Gate-Source Voltage
- 10 V, + 23 V
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
1
Mounting Styles
通孔
Channel Mode
Enhancement
Manufacturer
Microchip
Brand
Microchip Technology / Atmel
Qg - Gate Charge
249 nC
Rds On - Drain-Source Resistance
17.6 mOhms
Typical Turn-Off Delay Time
51 ns
Id - Continuous Drain Current
113 A
系列
-
操作温度
-55°C ~ 175°C (TJ)
包装
Tube
子类别
MOSFETs
配置
Single
通道数量
1 Channel
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
22mOhm @ 40A, 20V
不同 Id 时 Vgs(th)(最大值)
2.7V @ 4.5mA (Typ)
输入电容(Ciss)(Max)@Vds
5280 pF @ 1000 V
门极电荷(Qg)(最大)@Vgs
249 nC @ 20 V
上升时间
13 ns
漏源电压 (Vdss)
1200 V
Vgs(最大值)
+22V, -10V
产品类别
MOSFET
场效应管特性
-
产品类别
MOSFET
MSC017SMA120B4拓展信息
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