Microchip Technology MSC040SMA120B4
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MSC040SMA120B4
1610-MSC040SMA120B4
晶体管 - FET,MOSFET - 单个
TO-247-4
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SICFET N-CH 1200V 66A TO247-4
--最小包装量--
MSC040SMA120B4详情
Microchip Technology MSC040SMA120B4重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-247-4
供应商器件包装
TO-247-4
厂商
微芯片技术
Package
Tube
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
66A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Power Dissipation (Max)
323W (Tc)
Base Product Number
MSC040
Continuous Drain Current Id
66
Number of Elements per Chip
1
Package Type
TO-247-4
Vds - Drain-Source Breakdown Voltage
1.2 kV
Vgs th - Gate-Source Threshold Voltage
2.6 V
Pd - Power Dissipation
323 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 175 C
Vgs - Gate-Source Voltage
- 10 V, + 23 V
Unit Weight
0.211644 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
1
Mounting Styles
通孔
Channel Mode
Enhancement
Manufacturer
Microchip
Brand
Microchip Technology / Atmel
Qg - Gate Charge
137 nC
Rds On - Drain-Source Resistance
40 mOhms
RoHS
Details
Id - Continuous Drain Current
66 A
系列
-
操作温度
-55°C ~ 175°C (TJ)
包装
Tube
子类别
MOSFETs
引脚数量
4
通道数量
1 Channel
功率耗散
323
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
50mOhm @ 40A, 20V
不同 Id 时 Vgs(th)(最大值)
2.6V @ 2mA
输入电容(Ciss)(Max)@Vds
1990 pF @ 1000 V
门极电荷(Qg)(最大)@Vgs
137 nC @ 20 V
漏源电压 (Vdss)
1200 V
Vgs(最大值)
+23V, -10V
产品类别
MOSFET
信道型
N
场效应管特性
-
产品类别
MOSFET
MSC040SMA120B4拓展信息
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