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¥38.608406
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¥36.423023
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¥34.361342
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¥32.416365
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¥30.581474
Microchip Technology MSC060SMA070S
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MSC060SMA070S
1610-MSC060SMA070S
晶体管 - FET,MOSFET - 单个
D3PAK-3
大陆
立即发货

MOSFET UNRLS, FG, SIC MOSFET, TO-268View in Development Tools Selector
--最小包装量--
¥
总价: ¥
MSC060SMA070S详情
Microchip Technology MSC060SMA070S重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
生命周期状态
Production (Last Updated: 2 months ago)
包装/外壳
D3PAK-3
安装类型
表面贴装
供应商器件包装
D3PAK
RoHS
Details
Mounting Styles
SMD/SMT
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
700 V
Id - Continuous Drain Current
37 A
Rds On - Drain-Source Resistance
69 mOhms
Vgs - Gate-Source Voltage
- 10 V, + 23 V
Vgs th - Gate-Source Threshold Voltage
1.9 V
Qg - Gate Charge
56 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
130 W
Channel Mode
Enhancement
Factory Pack QuantityFactory Pack Quantity
1
Unit Weight
0.218699 oz
Continuous Drain Current Id
37
Package
Tube
Base Product Number
MSC060
Current - Continuous Drain (Id) @ 25℃
37A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
厂商
微芯片技术
Power Dissipation (Max)
130W (Tc)
Product Status
活跃
包装
Tube
操作温度
-55°C ~ 175°C (TJ)
系列
-
配置
Single
通道数量
1 Channel
功率耗散
130
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
75mOhm @ 20A, 20V
不同 Id 时 Vgs(th)(最大值)
2.4V @ 1mA
输入电容(Ciss)(Max)@Vds
1175 pF @ 700 V
门极电荷(Qg)(最大)@Vgs
56 nC @ 20 V
漏源电压 (Vdss)
700 V
Vgs(最大值)
+23V, -10V
场效应管特性
-
MSC060SMA070S拓展信息
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