Microchip Technology MSC080SMA120JS15
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MSC080SMA120JS15
1610-MSC080SMA120JS15
晶体管 - FET,MOSFET - 单个
SOT-227-4, miniBLOC
大陆
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MOSFET SIC 1200V 80 MOHM 15A SOT
1最小包装量--
MSC080SMA120JS15详情
Microchip Technology MSC080SMA120JS15重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
底座安装
包装/外壳
SOT-227-4, miniBLOC
厂商
微芯片技术
Package
Bulk
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
2.8V @ 1mA
Power Dissipation (Max)
143W (Tc)
Base Product Number
MSC080
Mounting Styles
SMD/SMT
Factory Pack QuantityFactory Pack Quantity
1
Minimum Operating Temperature
- 55 C
Unit Weight
1.058219 oz
Vgs - Gate-Source Voltage
- 10 V, + 23 V
Maximum Operating Temperature
+ 175 C
Transistor Polarity
N-Channel
Pd - Power Dissipation
200 W
Vgs th - Gate-Source Threshold Voltage
2.8 V
Typical Turn-On Delay Time
4 ns
Vds - Drain-Source Breakdown Voltage
1.2 kV
Manufacturer
Microchip
Brand
Microchip Technology / Atmel
Rds On - Drain-Source Resistance
80 mOhms
Typical Turn-Off Delay Time
24 ns
Id - Continuous Drain Current
37 A
系列
-
操作温度
-55°C ~ 175°C (TJ)
子类别
Discrete Semiconductor Modules
通道数量
1 Channel
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
100mOhm @ 15A, 20V
输入电容(Ciss)(Max)@Vds
838 pF @ 1000 V
门极电荷(Qg)(最大)@Vgs
64 nC @ 20 V
上升时间
4 ns
漏源电压 (Vdss)
1200 V
Vgs(最大值)
+23V, -10V
产品类别
Discrete Semiconductor Modules
场效应管特性
-
产品
功率MOSFET模块
产品类别
Discrete Semiconductor Modules
MSC080SMA120JS15拓展信息
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