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¥602.793391
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¥568.673008
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¥536.483972
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¥506.116955
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¥477.468827
Microchip Technology MSC130SM120JCU2
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MSC130SM120JCU2
1610-MSC130SM120JCU2
晶体管 - FET,MOSFET - 单个
SOT-227-4, miniBLOC
大陆
立即发货

SICFET N-CH 1.2KV 173A SOT227
--最小包装量--
¥
总价: ¥
MSC130SM120JCU2详情
Microchip Technology MSC130SM120JCU2重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
底座安装
包装/外壳
SOT-227-4, miniBLOC
厂商
微芯片技术
Package
Tube
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
173A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Power Dissipation (Max)
745W (Tc)
Base Product Number
MSC130
Vr - Reverse Voltage
1200 V
Vds - Drain-Source Breakdown Voltage
1200 V
Typical Turn-On Delay Time
30 ns
Vgs th - Gate-Source Threshold Voltage
1.8 V
Pd - Power Dissipation
745 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 175 C
Vgs - Gate-Source Voltage
- 10 V, + 25 V
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
1
Mounting Styles
螺钉安装
Manufacturer
Microchip
Brand
微芯片技术
Rds On - Drain-Source Resistance
16 mOhms
RoHS
Details
Typical Turn-Off Delay Time
50 ns
Id - Continuous Drain Current
173 A
系列
-
操作温度
-55°C ~ 150°C (TJ)
包装
Bulk
类型
升压斩波器
子类别
Discrete Semiconductor Modules
配置
Single
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
16mOhm @ 80A, 20V
不同 Id 时 Vgs(th)(最大值)
2.8V @ 2mA
输入电容(Ciss)(Max)@Vds
6040 pF @ 1000 V
门极电荷(Qg)(最大)@Vgs
464 nC @ 20 V
上升时间
30 ns
漏源电压 (Vdss)
1200 V
Vgs(最大值)
+25V, -10V
产品类别
Discrete Semiconductor Modules
场效应管特性
-
产品
IGBT碳化硅模块
Vf-正向电压
1.5 V
产品类别
Discrete Semiconductor Modules
MSC130SM120JCU2拓展信息
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